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| Composite Transistors XN4504 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output 0.650.15 2.8 -0.3 +0.2 +0.25 1.5 -0.05 6 0.650.15 1 0.3 -0.05 0.5 -0.05 0.95 2.9 -0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 q 2SD1328 x 2 elements 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 25 20 12 0.5 1 300 150 -55 to +150 Unit V V V A A mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 5X Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON Resistance *1 *2 (Ta=25C) Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*2 1k IB=1mA f=1kHz V=0.3V Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 25V, IE = 0 VCE = 2V, IC = 500mA*1 VCE = 2V, IC = 1A*1 IC = 500mA, IB = 20mA IC = 500mA, IB = 50mA VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 25 20 12 typ 0 to 0.05 0.1 to 0.3 0.8 max 0.16-0.06 +0.2 s Basic Part Number of Element +0.1 1.450.1 s Features +0.1 +0.1 Unit V V V A 0.1 200 60 0.13 0.4 1.2 200 10 1.0 800 V V MHz pF Pulse measurement Ron test circuit VB VV VA Ron= VB !1000() VA-VB 1 Composite Transistors PT -- Ta 500 1.2 IB=4.0mA XN4504 IC -- VCE 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=25 Total power dissipation PT (mW) Collector current IC (A) 400 1.0 3.5mA 0.8 3.0mA 2.5mA 0.6 2.0mA 1.5mA 0.4 1.0mA 0.2 0.5mA 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 300 200 Ta=75C 25C -25C 100 0 0 40 80 120 160 0 0 1 2 3 4 5 6 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 IC/IB=10 1200 hFE -- IC VCE=2V 400 350 300 250 200 150 100 50 fT -- I E VCB=10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 1000 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C 800 Ta=75C 600 25C -25C 400 200 0.1 0.3 1 3 10 0 0.01 0.03 Transition frequency fT (MHz) 0.3 1 3 10 30 Forward current transfer ratio hFE 0.1 0 -1 -2 -3 -5 -10 -20 -30 -50 -100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 24 Collector output capacitance Cob (pF) 20 f=1MHz IE=0 Ta=25C 16 12 8 4 0 1 2 3 5 10 20 30 50 100 Collector to base voltage VCB (V) 2 |
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